PART |
Description |
Maker |
NTD32N06-1 NTD32N06-1G NTD32N06T4G NTD32N06 NTD32N |
Power MOSFET 32 Amps, 60 Volts 32 Amps, 60 Volts, N−Channel DPAK
|
ONSEMI[ON Semiconductor]
|
MGB19N35CL MGP19N35CL |
Ignition IGBT 19 Amps, 350 Volts(19A50V钳位电压,点火绝缘栅双极型晶体管(D2PAK封装 点火IGBT一十九安培50伏特,(9A50V钳位电压,点火绝缘栅双极型晶体管(采用D2PAK封装)) Ignition IGBT 19 Amps, 350 Volts(19A350V钳位电压,点火绝缘栅双极型晶体管(TO-220封装 19 A, 380 V, N-CHANNEL IGBT, TO-220AB Ignition IGBT 19 Amps, 350 Volts(19A锛?50V?充??靛?锛?????缂????????浣??锛?O-220灏??锛?
|
ON Semiconductor
|
NTMS4P01R2 NTMS4P01R2/D NTMS4P01R2-D |
Power MOSFET -4.5 Amps, -12 Volts P-Channel Enhancement-Mode Single SO-8 Package Receptacle With A Standard Tail Power MOSFET -4.5 Amps-12 Volts
|
ON Semiconductor
|
NTTD1P02R2-D NTTD1P02R2/D |
Power MOSFET -1.45 Amps-20 Volts Power MOSFET -1.45 Amps, -20 Volts P-Channel Enhancement Mode Dual Micro8 Package
|
ON Semiconductor
|
NTP27N06 NTB27N06 NTB27N06T4 |
Power MOSFET 27 Amps, 60 Volts N-Channel TO-220 and D2PAK Power MOSFET 27 Amps, 60 Volts N?Channel TO?220 and D2PAK Power MOSFET 27 Amps / 60 Volts NChannel TO220 and D2PAK LASER MOD 670NM .95MW MVP ROUND LASER MOD 635NM 4.9MW VHK ROUND 27 A, 60 V, 0.046 ohm, N-CHANNEL, Si, POWER, MOSFET
|
ONSEMI[ON Semiconductor]
|
NTP6N60-D NTP6N60/D |
Power MOSFET 6 Amps600 Volts Power MOSFET 6 Amps, 600 Volts N-Channel TO-220 and D2PAK
|
ON Semiconductor
|
MMDF3N03HDR2 MMDF3N03HD MMDF3N03HD-D |
Power MOSFET 3 Amps, 30 Volts 4.1 A, 30 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET Power MOSFET 3 Amps, 30 Volts N-Channel SO-8, Dual
|
ONSEMI[ON Semiconductor]
|
NTGS3433T1 NTGS3433 |
MOSFET -3.3 Amps, -12 Volts
|
ONSEMI[ON Semiconductor]
|
SSR1045 |
10 AMPS 45 VOLTS SCHOTTKY RECTIFIER
|
Solid States Devices, Inc
|